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2SJ380(F)
- Artikelnummer:
- 2SJ380(F)
- Tillverkare:
- Toshiba Semiconductor
- Beskrivning:
- MOSFET P-CH 100V 12A TO220NIS
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 18271 Pieces
- Datablad:
- 1.2SJ380(F).pdf2.2SJ380(F).pdf
Introduktion
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Specifikationer
| Vgs (th) (Max) @ Id: | 2V @ 1mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | TO-220NIS |
| Serier: | - |
| Rds On (Max) @ Id, Vgs: | 210 mOhm @ 6A, 10V |
| Effektdissipation (Max): | 35W (Tc) |
| Förpackning: | Tube |
| Förpackning / fall: | TO-220-3 Full Pack |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | 2SJ380(F) |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1100pF @ 10V |
| Gate Laddning (Qg) (Max) @ Vgs: | 48nC @ 10V |
| FET-typ: | P-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | P-Channel 100V 12A (Ta) 35W (Tc) Through Hole TO-220NIS |
| Avlopp till källspänning (Vdss): | 100V |
| Beskrivning: | MOSFET P-CH 100V 12A TO220NIS |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 12A (Ta) |
| Email: | [email protected] |
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