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APT18M80B
- Artikelnummer:
- APT18M80B
- Tillverkare:
- Microsemi
- Beskrivning:
- MOSFET N-CH 800V 19A TO-247
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 18798 Pieces
- Datablad:
- 1.APT18M80B.pdf2.APT18M80B.pdf
Introduktion
BYCHIPS är strumpfördelaren för APT18M80B, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för APT18M80B via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 1mA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | TO-247 [B] |
| Serier: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 530 mOhm @ 9A, 10V |
| Effektdissipation (Max): | 500W (Tc) |
| Förpackning: | Tube |
| Förpackning / fall: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 22 Weeks |
| Tillverkarens varunummer: | APT18M80B |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3760pF @ 25V |
| Gate Laddning (Qg) (Max) @ Vgs: | 120nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 800V 19A (Tc) 500W (Tc) Through Hole TO-247 [B] |
| Drivspänning (Max Rds På, Min Rds På): | 10V |
| Avlopp till källspänning (Vdss): | 800V |
| Beskrivning: | MOSFET N-CH 800V 19A TO-247 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 19A (Tc) |
| Email: | [email protected] |
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