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DTA123YUAT106
- Artikelnummer:
- DTA123YUAT106
- Tillverkare:
- LAPIS Semiconductor
- Beskrivning:
- TRANS PREBIAS PNP 200MW UMT3
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 12251 Pieces
- Datablad:
- DTA123YUAT106.pdf
Introduktion
BYCHIPS är strumpfördelaren för DTA123YUAT106, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för DTA123YUAT106 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Spänning - Samlare Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Mättnad (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Transistortyp: | PNP - Pre-Biased |
| Leverantörs Device Package: | UMT3 |
| Serier: | - |
| Motstånd - Emitter Base (R2) (Ohms): | 10k |
| Motstånd - Base (R1) (Ohms): | 2.2k |
| Effekt - Max: | 200mW |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | SC-70, SOT-323 |
| Andra namn: | DTA123YUAT106-ND DTA123YUAT106TR |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 10 Weeks |
| Tillverkarens varunummer: | DTA123YUAT106 |
| Frekvens - Övergång: | 250MHz |
| Utvidgad beskrivning: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3 |
| Beskrivning: | TRANS PREBIAS PNP 200MW UMT3 |
| Likströmsstigning (hFE) (Min) @ Ic, Vce: | 33 @ 10mA, 5V |
| Nuvarande - Collector Cutoff (Max): | 500nA |
| Nuvarande - Samlare (Ic) (Max): | 100mA |
| Email: | [email protected] |
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