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FDD3510H
- Artikelnummer:
- FDD3510H
- Tillverkare:
- Fairchild/ON Semiconductor
- Beskrivning:
- MOSFET N/P-CH 80V 4.3A/2.8A DPAK
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 17672 Pieces
- Datablad:
- FDD3510H.pdf
Introduktion
BYCHIPS är strumpfördelaren för FDD3510H, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för FDD3510H via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Leverantörs Device Package: | TO-252-4L |
| Serier: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 4.3A, 10V |
| Effekt - Max: | 1.3W |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| Andra namn: | FDD3510HTR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 17 Weeks |
| Tillverkarens varunummer: | FDD3510H |
| Inputkapacitans (Ciss) (Max) @ Vds: | 800pF @ 40V |
| Gate Laddning (Qg) (Max) @ Vgs: | 18nC @ 10V |
| FET-typ: | N and P-Channel, Common Drain |
| FET-funktionen: | Logic Level Gate |
| Utvidgad beskrivning: | Mosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L |
| Avlopp till källspänning (Vdss): | 80V |
| Beskrivning: | MOSFET N/P-CH 80V 4.3A/2.8A DPAK |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 4.3A, 2.8A |
| Email: | [email protected] |
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