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FQE10N20CTU
- Artikelnummer:
- FQE10N20CTU
- Tillverkare:
- Fairchild/ON Semiconductor
- Beskrivning:
- MOSFET N-CH 200V 4A TO-126
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 16114 Pieces
- Datablad:
- FQE10N20CTU.pdf
Introduktion
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Specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | TO-126 |
| Serier: | QFET® |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 2A, 10V |
| Effektdissipation (Max): | 12.8W (Tc) |
| Förpackning: | Tube |
| Förpackning / fall: | TO-225AA, TO-126-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | FQE10N20CTU |
| Inputkapacitans (Ciss) (Max) @ Vds: | 510pF @ 25V |
| Gate Laddning (Qg) (Max) @ Vgs: | 26nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 200V 4A (Tc) 12.8W (Tc) Through Hole TO-126 |
| Avlopp till källspänning (Vdss): | 200V |
| Beskrivning: | MOSFET N-CH 200V 4A TO-126 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 4A (Tc) |
| Email: | [email protected] |
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