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IPB083N10N3 G
- Artikelnummer:
- IPB083N10N3 G
- Tillverkare:
- International Rectifier (Infineon Technologies)
- Beskrivning:
- MOSFET N-CH 100V 80A TO263-3
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 17845 Pieces
- Datablad:
- IPB083N10N3 G.pdf
Introduktion
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Specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 75µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PG-TO263-2 |
| Serier: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.3 mOhm @ 73A, 10V |
| Effektdissipation (Max): | 125W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andra namn: | IPB083N10N3 G-ND IPB083N10N3G IPB083N10N3GATMA1 SP000458812 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 12 Weeks |
| Tillverkarens varunummer: | IPB083N10N3 G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3980pF @ 50V |
| Gate Laddning (Qg) (Max) @ Vgs: | 55nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG-TO263-2 |
| Drivspänning (Max Rds På, Min Rds På): | 6V, 10V |
| Avlopp till källspänning (Vdss): | 100V |
| Beskrivning: | MOSFET N-CH 100V 80A TO263-3 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
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