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MJ11030G
- Artikelnummer:
- MJ11030G
- Tillverkare:
- AMI Semiconductor / ON Semiconductor
- Beskrivning:
- TRANS NPN DARL 90V 50A TO-3
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 13811 Pieces
- Datablad:
- MJ11030G.pdf
Introduktion
BYCHIPS är strumpfördelaren för MJ11030G, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för MJ11030G via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Spänning - Samlare Emitter Breakdown (Max): | 90V |
|---|---|
| Vce Mättnad (Max) @ Ib, Ic: | 3.5V @ 500mA, 50A |
| Transistortyp: | NPN - Darlington |
| Leverantörs Device Package: | TO-3 |
| Serier: | - |
| Effekt - Max: | 300W |
| Förpackning: | Tray |
| Förpackning / fall: | TO-204AE |
| Driftstemperatur: | -55°C ~ 200°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | MJ11030G |
| Frekvens - Övergång: | - |
| Utvidgad beskrivning: | Bipolar (BJT) Transistor NPN - Darlington 90V 50A 300W Through Hole TO-3 |
| Beskrivning: | TRANS NPN DARL 90V 50A TO-3 |
| Likströmsstigning (hFE) (Min) @ Ic, Vce: | 1000 @ 25A, 5V |
| Nuvarande - Collector Cutoff (Max): | 2mA |
| Nuvarande - Samlare (Ic) (Max): | 50A |
| Email: | [email protected] |
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