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NVMS10P02R2G
- Artikelnummer:
- NVMS10P02R2G
- Tillverkare:
- AMI Semiconductor / ON Semiconductor
- Beskrivning:
- MOSFET P-CH 20V 10A 8SOIC
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 17155 Pieces
- Datablad:
- NVMS10P02R2G.pdf
Introduktion
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Specifikationer
| Vgs (th) (Max) @ Id: | - |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | 8-SOIC |
| Serier: | - |
| Rds On (Max) @ Id, Vgs: | - |
| Effektdissipation (Max): | - |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | 8-SOIC (0.154", 3.90mm Width) |
| Driftstemperatur: | - |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | NVMS10P02R2G |
| Inputkapacitans (Ciss) (Max) @ Vds: | - |
| Gate Laddning (Qg) (Max) @ Vgs: | - |
| FET-typ: | P-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | P-Channel 20V 10A (Ta) Surface Mount 8-SOIC |
| Avlopp till källspänning (Vdss): | 20V |
| Beskrivning: | MOSFET P-CH 20V 10A 8SOIC |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 10A (Ta) |
| Email: | [email protected] |
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