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RCD100N19TL
- Artikelnummer:
- RCD100N19TL
- Tillverkare:
- LAPIS Semiconductor
- Beskrivning:
- MOSFET N-CH 190V 10A CPT3
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 18408 Pieces
- Datablad:
- RCD100N19TL.pdf
Introduktion
BYCHIPS är strumpfördelaren för RCD100N19TL, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för RCD100N19TL via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | CPT3 |
| Serier: | - |
| Rds On (Max) @ Id, Vgs: | 182 mOhm @ 5A, 10V |
| Effektdissipation (Max): | 850mW (Ta), 20W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andra namn: | RCD100N19TLTR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 17 Weeks |
| Tillverkarens varunummer: | RCD100N19TL |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2000pF @ 25V |
| Gate Laddning (Qg) (Max) @ Vgs: | 52nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 190V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3 |
| Drivspänning (Max Rds På, Min Rds På): | 4V, 10V |
| Avlopp till källspänning (Vdss): | 190V |
| Beskrivning: | MOSFET N-CH 190V 10A CPT3 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 10A (Tc) |
| Email: | [email protected] |
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