köpa RN1701JE(TE85L,F) med BYCHPS
Köp med garanti
RN1701JE(TE85L,F)
- Artikelnummer:
- RN1701JE(TE85L,F)
- Tillverkare:
- Toshiba Semiconductor
- Beskrivning:
- TRANS 2NPN PREBIAS 0.1W ESV
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 17783 Pieces
- Datablad:
- RN1701JE(TE85L,F).pdf
Introduktion
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Specifikationer
| Spänning - Samlare Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Mättnad (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistortyp: | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Leverantörs Device Package: | ESV |
| Serier: | - |
| Motstånd - Emitter Base (R2) (Ohms): | 4.7k |
| Motstånd - Base (R1) (Ohms): | 4.7k |
| Effekt - Max: | 100mW |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | SOT-553 |
| Andra namn: | RN1701JE(TE85LF)TR |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | RN1701JE(TE85L,F) |
| Frekvens - Övergång: | 250MHz |
| Utvidgad beskrivning: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV |
| Beskrivning: | TRANS 2NPN PREBIAS 0.1W ESV |
| Likströmsstigning (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
| Nuvarande - Collector Cutoff (Max): | 100nA (ICBO) |
| Nuvarande - Samlare (Ic) (Max): | 100mA |
| Email: | [email protected] |
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