köpa SI3493DDV-T1-GE3 med BYCHPS
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SI3493DDV-T1-GE3
- Artikelnummer:
- SI3493DDV-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET P-CH 20V 8A 6TSOP
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 14351 Pieces
- Datablad:
- SI3493DDV-T1-GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SI3493DDV-T1-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SI3493DDV-T1-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Vgs (Max): | ±8V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | 6-TSOP |
| Serier: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 24 mOhm @ 7.5A, 4.5V |
| Effektdissipation (Max): | 3.6W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | SOT-23-6 Thin, TSOT-23-6 |
| Andra namn: | SI3493DDV-T1-GE3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 16 Weeks |
| Tillverkarens varunummer: | SI3493DDV-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1825pF @ 10V |
| Gate Laddning (Qg) (Max) @ Vgs: | 30nC @ 4.5V |
| FET-typ: | P-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP |
| Drivspänning (Max Rds På, Min Rds På): | 1.8V, 4.5V |
| Avlopp till källspänning (Vdss): | 20V |
| Beskrivning: | MOSFET P-CH 20V 8A 6TSOP |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 8A (Tc) |
| Email: | [email protected] |
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