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SI3586DV-T1-GE3
- Artikelnummer:
- SI3586DV-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N/P-CH 20V 2.9A 6-TSOP
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 19589 Pieces
- Datablad:
- SI3586DV-T1-GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SI3586DV-T1-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SI3586DV-T1-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 1.1V @ 250µA |
|---|---|
| Leverantörs Device Package: | 6-TSOP |
| Serier: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.4A, 4.5V |
| Effekt - Max: | 830mW |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | SOT-23-6 Thin, TSOT-23-6 |
| Andra namn: | SI3586DV-T1-GE3TR SI3586DVT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | SI3586DV-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | - |
| Gate Laddning (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
| FET-typ: | N and P-Channel |
| FET-funktionen: | Logic Level Gate |
| Utvidgad beskrivning: | Mosfet Array N and P-Channel 20V 2.9A, 2.1A 830mW Surface Mount 6-TSOP |
| Avlopp till källspänning (Vdss): | 20V |
| Beskrivning: | MOSFET N/P-CH 20V 2.9A 6-TSOP |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 2.9A, 2.1A |
| Email: | [email protected] |
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