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SI5509DC-T1-GE3
- Artikelnummer:
- SI5509DC-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N/P-CH 20V 6.1A 1206-8
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 14564 Pieces
- Datablad:
- SI5509DC-T1-GE3.pdf
Introduktion
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Specifikationer
| Vgs (th) (Max) @ Id: | 2V @ 250µA |
|---|---|
| Leverantörs Device Package: | 1206-8 ChipFET™ |
| Serier: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 52 mOhm @ 5A, 4.5V |
| Effekt - Max: | 4.5W |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | 8-SMD, Flat Lead |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | SI5509DC-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 455pF @ 10V |
| Gate Laddning (Qg) (Max) @ Vgs: | 6.6nC @ 5V |
| FET-typ: | N and P-Channel |
| FET-funktionen: | Logic Level Gate |
| Utvidgad beskrivning: | Mosfet Array N and P-Channel 20V 6.1A, 4.8A 4.5W Surface Mount 1206-8 ChipFET™ |
| Avlopp till källspänning (Vdss): | 20V |
| Beskrivning: | MOSFET N/P-CH 20V 6.1A 1206-8 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 6.1A, 4.8A |
| Email: | [email protected] |
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