köpa SI7980DP-T1-GE3 med BYCHPS
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SI7980DP-T1-GE3
- Artikelnummer:
- SI7980DP-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET 2N-CH 20V 8A PPAK SO-8
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 19096 Pieces
- Datablad:
- SI7980DP-T1-GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SI7980DP-T1-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SI7980DP-T1-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Leverantörs Device Package: | PowerPAK® SO-8 Dual |
| Serier: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 5A, 10V |
| Effekt - Max: | 19.8W, 21.9W |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | PowerPAK® SO-8 Dual |
| Andra namn: | SI7980DP-T1-GE3TR SI7980DPT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 24 Weeks |
| Tillverkarens varunummer: | SI7980DP-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1010pF @ 10V |
| Gate Laddning (Qg) (Max) @ Vgs: | 27nC @ 10V |
| FET-typ: | 2 N-Channel (Half Bridge) |
| FET-funktionen: | Standard |
| Utvidgad beskrivning: | Mosfet Array 2 N-Channel (Half Bridge) 20V 8A 19.8W, 21.9W Surface Mount PowerPAK® SO-8 Dual |
| Avlopp till källspänning (Vdss): | 20V |
| Beskrivning: | MOSFET 2N-CH 20V 8A PPAK SO-8 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 8A |
| Email: | [email protected] |
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