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SIA850DJ-T1-GE3
- Artikelnummer:
- SIA850DJ-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N-CH 190V 0.95A SC70-6
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 15444 Pieces
- Datablad:
- SIA850DJ-T1-GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SIA850DJ-T1-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SIA850DJ-T1-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 1.4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PowerPAK® SC-70-6 Dual |
| Serier: | LITTLE FOOT® |
| Rds On (Max) @ Id, Vgs: | 3.8 Ohm @ 360mA, 4.5V |
| Effektdissipation (Max): | 1.9W (Ta), 7W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | PowerPAK® SC-70-6 Dual |
| Andra namn: | SIA850DJ-T1-GE3-ND SIA850DJ-T1-GE3TR SIA850DJT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | SIA850DJ-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 90pF @ 100V |
| Gate Laddning (Qg) (Max) @ Vgs: | 4.5nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | Schottky Diode (Isolated) |
| Utvidgad beskrivning: | N-Channel 190V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual |
| Avlopp till källspänning (Vdss): | 190V |
| Beskrivning: | MOSFET N-CH 190V 0.95A SC70-6 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 950mA (Tc) |
| Email: | [email protected] |
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