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SIB912DK-T1-GE3
- Artikelnummer:
- SIB912DK-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET 2N-CH 20V 1.5A SC-75-6
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 13573 Pieces
- Datablad:
- SIB912DK-T1-GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SIB912DK-T1-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SIB912DK-T1-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Leverantörs Device Package: | PowerPAK® SC-75-6L Dual |
| Serier: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 216 mOhm @ 1.8A, 4.5V |
| Effekt - Max: | 3.1W |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | PowerPAK® SC-75-6L Dual |
| Andra namn: | SIB912DK-T1-GE3TR SIB912DKT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 15 Weeks |
| Tillverkarens varunummer: | SIB912DK-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 95pF @ 10V |
| Gate Laddning (Qg) (Max) @ Vgs: | 3nC @ 8V |
| FET-typ: | 2 N-Channel (Dual) |
| FET-funktionen: | Logic Level Gate |
| Utvidgad beskrivning: | Mosfet Array 2 N-Channel (Dual) 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual |
| Avlopp till källspänning (Vdss): | 20V |
| Beskrivning: | MOSFET 2N-CH 20V 1.5A SC-75-6 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 1.5A |
| Email: | [email protected] |
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