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SIHF35N60E-GE3
- Artikelnummer:
- SIHF35N60E-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N-CH 600V 32A TO220
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 15660 Pieces
- Datablad:
- SIHF35N60E-GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SIHF35N60E-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SIHF35N60E-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | TO-220 Full Pack |
| Serier: | E |
| Rds On (Max) @ Id, Vgs: | 94 mOhm @ 17A, 10V |
| Effektdissipation (Max): | 39W (Tc) |
| Förpackning / fall: | TO-220-3 Full Pack |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 12 Weeks |
| Tillverkarens varunummer: | SIHF35N60E-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2760pF @ 100V |
| Gate Laddning (Qg) (Max) @ Vgs: | 132nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 600V 32A (Tc) 39W (Tc) Through Hole TO-220 Full Pack |
| Drivspänning (Max Rds På, Min Rds På): | 10V |
| Avlopp till källspänning (Vdss): | 600V |
| Beskrivning: | MOSFET N-CH 600V 32A TO220 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 32A (Tc) |
| Email: | [email protected] |
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