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SIHG80N60E-GE3
- Artikelnummer:
- SIHG80N60E-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N-CH 600V 80A TO247AC
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 19841 Pieces
- Datablad:
- SIHG80N60E-GE3.pdf
Introduktion
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Specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | TO-247AC |
| Serier: | E |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 40A, 10V |
| Effektdissipation (Max): | 520W (Tc) |
| Förpackning / fall: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 19 Weeks |
| Tillverkarens varunummer: | SIHG80N60E-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 6900pF @ 100V |
| Gate Laddning (Qg) (Max) @ Vgs: | 443nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC |
| Drivspänning (Max Rds På, Min Rds På): | 10V |
| Avlopp till källspänning (Vdss): | 600V |
| Beskrivning: | MOSFET N-CH 600V 80A TO247AC |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
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