köpa SIHU3N50D-GE3 med BYCHPS
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SIHU3N50D-GE3
- Artikelnummer:
- SIHU3N50D-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N-CH 500V 3A TO251 IPAK
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 19520 Pieces
Introduktion
BYCHIPS är strumpfördelaren för SIHU3N50D-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SIHU3N50D-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | TO-251 |
| Serier: | - |
| Rds On (Max) @ Id, Vgs: | 3.2 Ohm @ 2.5A, 10V |
| Effektdissipation (Max): | 69W (Tc) |
| Förpackning: | Tube |
| Förpackning / fall: | TO-251-3 Short Leads, IPak, TO-251AA |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 14 Weeks |
| Tillverkarens varunummer: | SIHU3N50D-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 175pF @ 100V |
| Gate Laddning (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 500V 3A (Tc) 69W (Tc) Through Hole TO-251 |
| Avlopp till källspänning (Vdss): | 500V |
| Beskrivning: | MOSFET N-CH 500V 3A TO251 IPAK |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 3A (Tc) |
| Email: | [email protected] |
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