köpa SIR662DP-T1-GE3 med BYCHPS
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SIR662DP-T1-GE3
- Artikelnummer:
- SIR662DP-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N-CH 60V 60A PPAK SO-8
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 15275 Pieces
Introduktion
BYCHIPS är strumpfördelaren för SIR662DP-T1-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SIR662DP-T1-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PowerPAK® SO-8 |
| Serier: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 20A, 10V |
| Effektdissipation (Max): | 6.25W (Ta), 104W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | PowerPAK® SO-8 |
| Andra namn: | SIR662DP SIR662DP-T1-GE3TR SIR662DPT1GE3 SIR662DPTR SIR662DPTR-ND |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 24 Weeks |
| Tillverkarens varunummer: | SIR662DP-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 4365pF @ 30V |
| Gate Laddning (Qg) (Max) @ Vgs: | 96nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8 |
| Drivspänning (Max Rds På, Min Rds På): | 4.5V, 10V |
| Avlopp till källspänning (Vdss): | 60V |
| Beskrivning: | MOSFET N-CH 60V 60A PPAK SO-8 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 60A (Tc) |
| Email: | [email protected] |
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