köpa SIR800DP-T1-GE3 med BYCHPS
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SIR800DP-T1-GE3
- Artikelnummer:
- SIR800DP-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N-CH 20V 50A PPAK SO-8
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 12533 Pieces
- Datablad:
- SIR800DP-T1-GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SIR800DP-T1-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SIR800DP-T1-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 1.5V @ 250µA |
|---|---|
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PowerPAK® SO-8 |
| Serier: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 15A, 10V |
| Effektdissipation (Max): | 5.2W (Ta), 69W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | PowerPAK® SO-8 |
| Andra namn: | SIR800DP-T1-GE3TR SIR800DPT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 24 Weeks |
| Tillverkarens varunummer: | SIR800DP-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 5125pF @ 10V |
| Gate Laddning (Qg) (Max) @ Vgs: | 133nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 20V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8 |
| Drivspänning (Max Rds På, Min Rds På): | 2.5V, 10V |
| Avlopp till källspänning (Vdss): | 20V |
| Beskrivning: | MOSFET N-CH 20V 50A PPAK SO-8 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
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