köpa SIS776DN-T1-GE3 med BYCHPS
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SIS776DN-T1-GE3
- Artikelnummer:
- SIS776DN-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N-CH 30V 35A 1212-8
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 17469 Pieces
- Datablad:
- SIS776DN-T1-GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SIS776DN-T1-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SIS776DN-T1-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PowerPAK® 1212-8 |
| Serier: | SkyFET®, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 10A, 10V |
| Effektdissipation (Max): | 3.8W (Ta), 52W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | PowerPAK® 1212-8 |
| Driftstemperatur: | -50°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | SIS776DN-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1360pF @ 15V |
| Gate Laddning (Qg) (Max) @ Vgs: | 36nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | Schottky Diode (Body) |
| Utvidgad beskrivning: | N-Channel 30V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 |
| Avlopp till källspänning (Vdss): | 30V |
| Beskrivning: | MOSFET N-CH 30V 35A 1212-8 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 35A (Tc) |
| Email: | [email protected] |
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