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SQJB00EP-T1_GE3
- Artikelnummer:
- SQJB00EP-T1_GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET ARRAY 2N-CH 60V SO8
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 12695 Pieces
- Datablad:
- SQJB00EP-T1_GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SQJB00EP-T1_GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SQJB00EP-T1_GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 250µA |
|---|---|
| Leverantörs Device Package: | PowerPAK® SO-8 Dual |
| Serier: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 10A, 10V |
| Effekt - Max: | 48W |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | PowerPAK® SO-8 Dual |
| Andra namn: | SQJB00EP-T1_GE3TR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 13 Weeks |
| Tillverkarens varunummer: | SQJB00EP-T1_GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1700pF @ 25V |
| Gate Laddning (Qg) (Max) @ Vgs: | 35nC @ 10V |
| FET-typ: | 2 N-Channel (Dual) |
| FET-funktionen: | Standard |
| Utvidgad beskrivning: | Mosfet Array 2 N-Channel (Dual) 60V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual |
| Avlopp till källspänning (Vdss): | 60V |
| Beskrivning: | MOSFET ARRAY 2N-CH 60V SO8 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 30A (Tc) |
| Email: | [email protected] |
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