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IPB042N10N3GE8187ATMA1
- Artikelnummer:
- IPB042N10N3GE8187ATMA1
- Tillverkare:
- International Rectifier (Infineon Technologies)
- Beskrivning:
- MOSFET N-CH 100V 100A TO263-3
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 16637 Pieces
- Datablad:
- IPB042N10N3GE8187ATMA1.pdf
Introduktion
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Specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 150µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PG-TO263-3 |
| Serier: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
| Effektdissipation (Max): | 214W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andra namn: | IPB042N10N3 G E8187 IPB042N10N3 G E8187-ND IPB042N10N3 G E8187TR-ND SP000939332 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 14 Weeks |
| Tillverkarens varunummer: | IPB042N10N3GE8187ATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 8410pF @ 50V |
| Gate Laddning (Qg) (Max) @ Vgs: | 117nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 100V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3 |
| Avlopp till källspänning (Vdss): | 100V |
| Beskrivning: | MOSFET N-CH 100V 100A TO263-3 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 100A (Tc) |
| Email: | [email protected] |
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