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IPB65R660CFD
- Artikelnummer:
- IPB65R660CFD
- Tillverkare:
- International Rectifier (Infineon Technologies)
- Beskrivning:
- MOSFET N-CH 650V 6A TO263
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 15414 Pieces
- Datablad:
- IPB65R660CFD.pdf
Introduktion
BYCHIPS är strumpfördelaren för IPB65R660CFD, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för IPB65R660CFD via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 4.5V @ 200µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PG-TO263 |
| Serier: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 660 mOhm @ 2.1A, 10V |
| Effektdissipation (Max): | 62.5W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andra namn: | IPB65R660CFD-ND IPB65R660CFDATMA1 SP000861698 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 16 Weeks |
| Tillverkarens varunummer: | IPB65R660CFD |
| Inputkapacitans (Ciss) (Max) @ Vds: | 615pF @ 100V |
| Gate Laddning (Qg) (Max) @ Vgs: | 22nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263 |
| Drivspänning (Max Rds På, Min Rds På): | 10V |
| Avlopp till källspänning (Vdss): | 650V |
| Beskrivning: | MOSFET N-CH 650V 6A TO263 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 6A (Tc) |
| Email: | [email protected] |
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