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IPD65R650CEATMA1
- Artikelnummer:
- IPD65R650CEATMA1
- Tillverkare:
- International Rectifier (Infineon Technologies)
- Beskrivning:
- MOSFET N-CH 650V 10.1A TO252
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 16414 Pieces
- Datablad:
- IPD65R650CEATMA1.pdf
Introduktion
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Specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 0.21mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PG-TO252-3 |
| Serier: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Effektdissipation (Max): | 86W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andra namn: | SP001295798 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens varunummer: | IPD65R650CEATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Gate Laddning (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | Super Junction |
| Utvidgad beskrivning: | N-Channel 650V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3 |
| Avlopp till källspänning (Vdss): | 650V |
| Beskrivning: | MOSFET N-CH 650V 10.1A TO252 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 10.1A (Tc) |
| Email: | [email protected] |
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