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SIS439DNT-T1-GE3
- Artikelnummer:
- SIS439DNT-T1-GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET P-CH 30V 50A 1212-8
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 13729 Pieces
- Datablad:
- SIS439DNT-T1-GE3.pdf
Introduktion
BYCHIPS är strumpfördelaren för SIS439DNT-T1-GE3, vi har lager för omedelbar frakt och även tillgänglig för lång tid leverans. Vänligen skicka oss din köpplan för SIS439DNT-T1-GE3 via e-post, vi ger dig det bästa priset enligt din plan.
Specifikationer
| Vgs (th) (Max) @ Id: | 2.8V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PowerPAK® 1212-8 |
| Serier: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 14A, 10V |
| Effektdissipation (Max): | 3.8W (Ta), 52.1W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | PowerPAK® 1212-8 |
| Andra namn: | SIS439DNT-T1-GE3TR |
| Driftstemperatur: | -50°C ~ 150°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 24 Weeks |
| Tillverkarens varunummer: | SIS439DNT-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2135pF @ 15V |
| Gate Laddning (Qg) (Max) @ Vgs: | 68nC @ 10V |
| FET-typ: | P-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | P-Channel 30V 50A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8 |
| Avlopp till källspänning (Vdss): | 30V |
| Beskrivning: | MOSFET P-CH 30V 50A 1212-8 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
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