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SQD50N06-09L_GE3
- Artikelnummer:
- SQD50N06-09L_GE3
- Tillverkare:
- Vishay / Siliconix
- Beskrivning:
- MOSFET N-CH 60V 50A
- Ledningsfri status / RoHS-status:
- Blyfri / RoHS-kompatibel
- tillgänglig kvantitet:
- 14351 Pieces
- Datablad:
- SQD50N06-09L_GE3.pdf
Introduktion
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Specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | TO-252, (D-Pak) |
| Serier: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 20A, 10V |
| Effektdissipation (Max): | 136W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andra namn: | SQD50N06-09L-GE3 SQD50N06-09L-GE3-ND SQD50N06-09L_GE3TR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstyp: | Surface Mount |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Tillverkarens normala ledtid: | 18 Weeks |
| Tillverkarens varunummer: | SQD50N06-09L_GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3065pF @ 25V |
| Gate Laddning (Qg) (Max) @ Vgs: | 72nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Utvidgad beskrivning: | N-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak) |
| Drivspänning (Max Rds På, Min Rds På): | 4.5V, 10V |
| Avlopp till källspänning (Vdss): | 60V |
| Beskrivning: | MOSFET N-CH 60V 50A |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
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